Fishing – trapping – and vermin destroying
Patent
1983-10-07
1990-04-10
Larkins, William D.
Fishing, trapping, and vermin destroying
357 59, 437 24, 437 27, 437 60, 437918, H01L 21265, H01L 2368
Patent
active
049165070
ABSTRACT:
A method of fabricating a resistor in a polycrystalline semiconductor material includes rendering the material conductive by a heavy doping implantation of ions which are electrically active with respect to the material. Ions which are electrically inactive, for example, argon ions, are then implanted in an area of the material with a concentration that is controlled to form a resistor having a desired resistance value. The method permits the precise and accurate control of the fabrication of load resistors for logic circuits within a very wide resistance range, and the resulting resistance values are a linear function of the concentration of the inactive ions.
REFERENCES:
patent: 3796929 (1974-03-01), Nicholas et al.
patent: 3886587 (1975-05-01), Nicolay
patent: 4053925 (1977-10-01), Burr et al.
patent: 4110776 (1978-08-01), Rao et al.
patent: 4367580 (1983-01-01), Guterman
patent: 4399451 (1983-08-01), Shirai
patent: 4416049 (1983-11-01), McElroy
patent: 4432008 (1984-02-01), Mattiel
"Minority Carrier Lifetime in Ion-Implanted and Annealed Silicon", Applied Physics, Letters, vol. 17, No. 3, pp. 107-109, Aug. 1, 1970; by D. Eirug Davies and S. A. Roosild.
"The Effect of Germanium Ion Implantation Dose on the Amorphization and Recrystallization of Polycrystalline Silicon Films", Journal of Applied Physics, vol. 52, No. 11, pp. 6655-6658, Nov. 1981; by Y. Komen.
Silicon Semiconductor Data, Pergamon Press, pp. 164-165 and 170-173, by Helmut F. Wolf.
Boudou Alain
Marchetaux Jean-Claude
Bull S.A.
Larkins William D.
LandOfFree
Polysilicon resistor implanted with rare gas does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polysilicon resistor implanted with rare gas, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon resistor implanted with rare gas will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2302399