Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1997-04-18
1999-01-05
Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257516, 257534, 438382, H01L 2900
Patent
active
058567020
ABSTRACT:
The invention relates to a polysilicon resistor made by forming a film of polysilicon doped with an impurity on a dielectric film on a semiconductor substrate and patterning the polysilicon film. An object of the invention is to provide a polysilicon resistor which has a low resistance value and occupies a small area. A slot is formed in the dielectric film and is filled with the polysilicon film. The dielectric film and the patterned polysilicon film are overlaid with a second dielectric film, and a pair of contact windows are opened in the second dielectric film such that each contact window is partly over an end section of the slot. A plurality of parallel slots can be formed in the first dielectric film to further lower the resistance value or to further reduce the area of the patterned polysilicon film. As an alternative, at least one slot is formed in the substrate and is filled with a polysilicon film after depositing a dielectric film on the substrate surface including the surfaces in the slot(s).
REFERENCES:
patent: 5352923 (1994-10-01), Boyd et al.
patent: 5382549 (1995-01-01), Ohshima et al.
patent: 5530270 (1996-06-01), Takahashi et al.
patent: 5567977 (1996-10-01), Jimenez
Eckert II George C.
NEC Corporation
Wallace Valencia
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