Polysilicon programming memory cell

Details Polysilicon programming memory cell Polysilicon programming memory cell

1996-03-13

1997-07-22

Clawson, Jr., Joseph E.

Static information storage and retrieval

Floating gate

Particular connection

36518501, 257316, G11C 1600

Patent

active

056509600

ABSTRACT:
A method for programming a memory cell is disclosed. The state of the memory cell is determined by the presence or absence of a spacer short. A memory cell has a floating gate, a control gate and an insulating layer separating the floating gate and the control gate. Spacers are deposited on the sides of the control gate and the insulating layer. When the cell is selected to be programmed in the "off" or non-conductive state, the spacers are in contact only with the control gate and the insulating layer. When the cell is selected to be programmed in the "on" or conductive state, the spacers are in contact with the control gate, the insulating layer, and the floating gate, thereby creating a spacer short.

REFERENCES:
patent: 5319593 (1994-06-01), Wolstenholme
patent: 5326999 (1994-07-01), Kim et al.

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