Polysilicon plug bipolar transistor for phase change memory

Details Polysilicon plug bipolar transistor for phase change memory Polysilicon plug bipolar transistor for phase change memory

2009-01-13

2011-10-04

Valentine, Jami M (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C257S565000, C257S309000, C257SE29002, C257SE47001, C257SE29174, C257SE21613, C438S102000, C438S103000, C365S163000

Reexamination Certificate

active

08030635

ABSTRACT:
Memory devices and methods for manufacturing are described herein. A memory device described herein includes a plurality of memory cells. Memory cells in the plurality of memory cells comprise respective bipolar junction transistors and memory elements. The bipolar junction transistors are arranged in a common collector configuration and include an emitter comprising doped polysilicon having a first conductivity type, the emitter contacting a corresponding word line in a plurality of word lines to define a pn junction. The bipolar junction transistors include a portion of the corresponding word line underlying the emitter acting as a base, and a collector comprising a portion of the single-crystalline substrate underlying the base.

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