Polysilicon pixel electrode

Optical: systems and elements – Holographic system or element – Using a hologram as an optical element

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359 87, 257 59, 257 72, 437173, 437233, G02F 11343, H01L 2126, H01L 21469

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active

054713307

ABSTRACT:
A liquid crystal display wherein each pixel has a thin film transistor with a silicon pixel electrode. A doping and recrystallization of the silicon is effected to increase the electrical conductivity and light transmittance of the silicon adequately for the pixel electrode.

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Shimizu et al., "On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing", Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990, pp. L1775-L1777.
A. Yamamoto et al., "A2/3 Inch Fully Integrated Active-Matrix LCD with Thin Mesh Polysilicon Electrodes", 1989, pp. 7.2.1-7.2.4 IEDM Technical Digest of IEEE.
G. Lubberts et al., "Optical Properties of Phosphorus-Doped Polycrystalline Silicon Layers", Nov. 1981, pp. 6870-6878 Journal of Applied Physics 52(11).
Abstract--JP 1241862 (Sony), Sep. 26, 1989, Patent Abstracts of Japan, vol. 13, No. 578 (E-864).

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