Polysilicon pixel electrode

Details Polysilicon pixel electrode Polysilicon pixel electrode

1993-07-29

1995-11-28

Gross, Anita Pellman

Optical: systems and elements

Holographic system or element

Using a hologram as an optical element

359 87, 257 59, 257 72, 437173, 437233, G02F 11343, H01L 2126, H01L 21469

Patent

active

054713307

ABSTRACT:
A liquid crystal display wherein each pixel has a thin film transistor with a silicon pixel electrode. A doping and recrystallization of the silicon is effected to increase the electrical conductivity and light transmittance of the silicon adequately for the pixel electrode.

REFERENCES:
patent: 5051800 (1991-09-01), Shoji et al.
patent: 5132820 (1992-07-01), Someya et al.
patent: 5242859 (1993-09-01), Degelormo et al.
patent: 5245452 (1993-09-01), Nakamura et al.
patent: 5248630 (1993-09-01), Serikawa et al.
patent: 5366926 (1994-11-01), Mei et al.
Shimizu et al., "On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing", Japanese Journal of Applied Physics, vol. 29, No. 10, Oct. 1990, pp. L1775-L1777.
A. Yamamoto et al., "A2/3 Inch Fully Integrated Active-Matrix LCD with Thin Mesh Polysilicon Electrodes", 1989, pp. 7.2.1-7.2.4 IEDM Technical Digest of IEEE.
G. Lubberts et al., "Optical Properties of Phosphorus-Doped Polycrystalline Silicon Layers", Nov. 1981, pp. 6870-6878 Journal of Applied Physics 52(11).
Abstract--JP 1241862 (Sony), Sep. 26, 1989, Patent Abstracts of Japan, vol. 13, No. 578 (E-864).

Affiliated with

Also associated with

Rating

Polysilicon pixel electrode does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polysilicon pixel electrode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon pixel electrode will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2017361