Polysilicon mask for etching thick insulator

Details Polysilicon mask for etching thick insulator Polysilicon mask for etching thick insulator

1978-05-08

1979-04-10

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

148187, 156657, H01L 2102

Patent

active

041481330

ABSTRACT:
An improved method is disclosed for etching the thick field insulator films of silicon-oxy-nitride, during the fabrication process of metal oxide semiconductor (MOS) devices, wherein a polycrystalline silicon etch mask is used in conjunction with an acid etchant to etch the gate and interconnect openings through the thick field insulator to the source, gate and chain regions of the MOS devices for a memory array.

REFERENCES:
patent: 3475234 (1969-10-01), Kerwin et al.
patent: 3753807 (1973-08-01), Hoare et al.
patent: 3886000 (1975-05-01), Bratter et al.
patent: 3898105 (1975-08-01), Mai et al.
patent: 3940288 (1976-02-01), Takagi et al.
patent: 3966501 (1976-06-01), Nomura et al.
patent: 4039358 (1977-08-01), Kitajima et al.
patent: 4050967 (1977-09-01), Rosnowski et al.
patent: 4062707 (1977-12-01), Mochizuki et al.

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