Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1999-08-18
2000-12-26
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
H01L 2900
Patent
active
061664219
ABSTRACT:
The contamination introduced into a conventional fuse via the window opening of the fuse is eliminated by forming a fuse with a cavity. When the fuse is programmed by passing a current through the fuse which is sufficient to heat up the fuse material, the heated fuse material flows up into the cavity, thereby providing an open current path.
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M. Alavi et al., "A PROM Element Based on Salicide Agglomeration of Poly Fuses in a CMOS Logic Process" IEDM 9 7 (Dec. 1997) pp. 855-858.
Bergemont Albert
Kalnitsky Alexander
Carroll J.
National Semiconductor Corporation
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