Polysilicon FETs

Radiation imagery chemistry: process – composition – or product th – Post imaging processing – Physical developing

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 2, 357 4, 357 59, 430319, H01L 2978

Patent

active

051112604

ABSTRACT:
Field effect transistors in which the channel region is made of thin highly doped polysilicon which is preferably also hydrogen passivated.

REFERENCES:
patent: 3500137 (1970-03-01), Schroen et al.
patent: 3814992 (1974-06-01), Kump
patent: 3891468 (1975-06-01), Ito et al.
patent: 3958266 (1976-05-01), Athanas
patent: 4072974 (1978-02-01), Ipri
patent: 4389481 (1983-06-01), Poleshuk et al.
patent: 4395726 (1983-07-01), Maegushi
Applied Physics Letters, vol. 36, #7, Apr. 1, 1980, "Enhanced Conductivity in Plasma Hydrogenated Polysilicon Films", by D. R. Campbell.
IEEE Transactions on Electron Devices, vol. #12, Dec. 1966, "Thin Film SOS Deep Depletion MOS Transistors", by Heiman.
Electron Device Letters, ELD-1, pp. 117-118, 1980, by Gibbons.
IEEE Transactions on Electron Devices, ED-29, pp. 585-589, 1982 by Colinge.
IEDM Technical Digest, pp. 370-373, 1979, by Fizuha et al.
IEDM Technical Digest, 1978, pp. 360-363, by Oboyone.
IEEE Journal of Solid State Circuits, SC-17, pp. 799-803, 1982, by Oochii.
IEEE Journal of Solid State Circuits, SC-17, pp. 804-809, 1982, by Ochida.
IEEE Transactions on Electron Devices, ED-26, pp. 2-9, 1979, by May.
IEEE Electron Device Letters, vol. 4, #10, Oct. 1983, "P Channel MOSFET in LPCVD Polysilicon", by Malhi, pp. 369-371.
Applied Physics Letters, vol. 42, #8, Apr. 1983, "Polysilicon Si Thin Film Transistor", by Hirai, pp. 701-703.
Solid State Electronics, vol. 24, #11, Nov. 1981, by Lee, "The Field Effect Electron Mob . . . in Poly Si", pp. 1059-1066.
IEEE Electron Device Letters, vol. 1, #8, Aug. 1980, "Hydrogenation of FET in Poly Si Films", pp. 159-161.
Appl. Phys. Lett. 42(8), Apr. 15, 1983, "Glow Discharge Polycrystalline Silicon Thin-Film Transistors", by Hirai et al., pp. 701-703.
Journal of Applied Physics, vol. 46, No. 12, Dec. 1975, "The Electrical Properties of Polycrystalline Silicon Films", by Seto, pp. 5247-5254.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Polysilicon FETs does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polysilicon FETs, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon FETs will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1416418

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.