Polysilicon etch useful during the manufacture of a...

Details Polysilicon etch useful during the manufacture of a... Polysilicon etch useful during the manufacture of a...

2007-01-16

2007-01-16

Goudreau, George A. (Department: 1763)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C438S714000, C438S719000, C438S725000, C438S734000

Reexamination Certificate

active

10829061

ABSTRACT:
A method for etching a polysilicon layer comprises the steps of providing a semiconductor wafer substrate assembly having at least first and second features therein in spaced relation to each other which define an opening therebetween. A blanket polysilicon is formed over the wafer assembly and within the opening. A patterned photoresist layer is formed over the polysilicon layer, then the polysilicon layer within the opening is etched with a first etch. Subsequent to the first etch, the polysilicon with the opening is etched with a second etch comprising a halogen-containing gas flow rate of from about 35 sccm to about 65 sccm and an oxygen-containing gas (for example He—O2) flow rate of from about 12 sccm to about 15.6 sccm.

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