Active solid-state devices (e.g. – transistors – solid-state diode – Contacts or leads including fusible link means or noise...
Reexamination Certificate
2009-04-24
2011-12-06
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Contacts or leads including fusible link means or noise...
C257S755000, C257SE23149, C438S601000
Reexamination Certificate
active
08072049
ABSTRACT:
A polysilicon resistor fuse has an elongated bow-tie body that is wider at the opposite ends relative to a narrow central portion. The opposite ends of the body of the fuse have high concentrations of N-type dopants to make them low resistance contacts. The upper portion of the central body has a graded concentration of N-type dopants that decreases in a direction from the top surface toward the middle of the body between the opposite surfaces. The lower central portion of the body is lightly doped with P-type dopants. The central N-type region is a resistive region.
REFERENCES:
patent: 4975385 (1990-12-01), Beinglass et al.
patent: 5264725 (1993-11-01), Mullarkey et al.
patent: 5303402 (1994-04-01), McLaughlin et al.
patent: 6420217 (2002-07-01), Kalnitsky et al.
patent: 6642601 (2003-11-01), Marshall et al.
patent: 2003/0205777 (2003-11-01), Ito et al.
patent: 2005/0224910 (2005-10-01), Kuno et al.
patent: 2008/0157201 (2008-07-01), Marshall
patent: 2009/0140382 (2009-06-01), Gao et al.
Fournier Paul
Gagne Daniel
Gagne Nickole
Dickey Thomas L
Erdem Fazli
Fairchild Semiconductor Corporation
Hiscock & Barclay LLP
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