Polysilicon-collector-on-insulator polysilicon-emitter bipolar t

Details Polysilicon-collector-on-insulator polysilicon-emitter bipolar t Polysilicon-collector-on-insulator polysilicon-emitter bipolar t

1991-08-30

1993-10-26

Davie, James W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With means to increase inverse gain

257565, H01L 2972

Patent

active

052568962

ABSTRACT:
A bipolar transistor is described having a thin subcollector formed from alternating polycrystalline semiconductor material and silicide material disposed over an insulating layer. Because the subcollector is thin the transistor is less sensitive to alpha-particle events. The transistor has enhanced inverse current gain since there is a polycrystalline contact to the inverse emitter.

REFERENCES:
patent: 4532003 (1985-07-01), Beasom
patent: 5111269 (1992-05-01), Tsugaru
M. D. Hulvey et al, "Dielectric Isolation Process", IBM Technical Disclosure Bulletin, vol. 24, No. 11A, Apr. 1982, pp. 5458-5459.

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