Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With means to increase inverse gain
Patent
1993-02-02
1994-06-07
Davie, James W.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With means to increase inverse gain
257565, H01L 2972
Patent
active
053192397
ABSTRACT:
A bipolar transistor is described having a thin subcollector formed from alternating polycrystalline semiconductor material and silicide material disposed over an insulating layer. Because the subcollector is thin the transistor is less sensitive to alpha-particle events. The transistor has enhanced inverse current gain since there is a polycrystalline contact to the incerse emitter.
REFERENCES:
patent: 3579058 (1968-02-01), Armgarth
patent: 4532003 (1985-07-01), Beason
patent: 4794445 (1988-12-01), Homm et al.
Hulvey, M.D. et al., "Dielectric Isolation Process", IBM Technical Disclosure Bulletin, vol. 24, No. 11A, Apr. 1982, pp. 5458-5459.
Davie James W.
International Business Machines - Corporation
Morris Daniel P.
LandOfFree
Polysilicon-collector-on-insulator polysilicon-emitter bipolar does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polysilicon-collector-on-insulator polysilicon-emitter bipolar, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polysilicon-collector-on-insulator polysilicon-emitter bipolar will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-794941