Polysilicon carbon source/drain heterojunction thin-film transis

Details Polysilicon carbon source/drain heterojunction thin-film transis Polysilicon carbon source/drain heterojunction thin-film transis

1998-07-30

2000-01-25

Fahmy, Wael

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 57, 257 77, 257225, 257412, 257756, 438159, 438160, H01L 2184, H01L 29167

Patent

active

060181664

ABSTRACT:
The present invention includes forming a conductive layer on a substrate. Portions of the conductive layer are removed using a first photoresist layer as a mask. A first oxide layer is formed over the conductive layer and the substrate, and an amorphous silicon layer is then formed on the first oxide layer. After annealing the amorphous silicon layer, thereby transforming amorphous silicon layer to a polysilicon layer, a second oxide layer is formed on the polysilicon layer. The second oxide layer is removed using a second photoresist layer as a mask. An amorphous silicon carbon layer is formed over the second oxide layer and the polysilicon layer, and a heavily-doped amorphous silicon carbon layer is formed on the amorphous silicon carbon layer. After annealing the heavily-doped amorphous silicon carbon layer and the amorphous silicon carbon layer, thereby transforming the heavily-doped amorphous silicon carbon layer to a heavily-doped polysilicon carbon layer, and transforming the amorphous silicon carbon layer to a polysilicon carbon layer, portions of the polysilicon carbon layer, the heavily-doped polysilicon carbon layer and the polysilicon layer are removed using a third photoresist layer as a mask.

REFERENCES:
patent: 5189504 (1993-02-01), Nakayama et al.
patent: 5369040 (1994-11-01), Halvis et al.
patent: 5811325 (1998-09-01), Lin et al.

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