Polysilicon bipolar transistor and method of manufacturing it

Details Polysilicon bipolar transistor and method of manufacturing it Polysilicon bipolar transistor and method of manufacturing it

2006-08-15

2006-08-15

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Including isolation structure

C438S370000, C257S588000, C257S592000, C257SE29044, C257SE29124

Reexamination Certificate

active

07091100

ABSTRACT:
In the inventive method of producing a base terminal structure for a bipolar transistor, an etch stop layer is applied on a single-crystal semiconductor substrate, a poly-crystal base terminal layer is produced on the etch stop layer and an emitter window is etched in the base terminal layer using the etch stop layer as an etch stop.

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patent: 2001/0051413 (2001-12-01), Chantre et al.
patent: 2 805 924 (2001-09-01), None
patent: WO 98/57367 (1998-12-01), None
patent: WO 01/39264 (2001-05-01), None

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