Polysilicon-base self-aligned bipolar transistor process

Details Polysilicon-base self-aligned bipolar transistor process Polysilicon-base self-aligned bipolar transistor process

1981-08-17

1983-05-03

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 148187, 357 34, 357 59, 357 91, H01L 21263, H01L 2122

Patent

active

043819532

ABSTRACT:
Disclosed is a process for forming an improved bipolar transistor in a silicon substrate of a first conductivity type, said silicon substrate having a planar surface, a subcollector region of a second conductivity type formed in said substrate, an epitaxial layer of said second conductivity type formed on said planar surface of said substrate, and first, second and third spaced apart recessed oxide isolation regions extending from the planar surface of said epitaxial layer into said substrate, a subcollector reach-through region positioned between said second and third recessed oxide isolation regions, said subcollector reach-through region extending from said planar surface of said epitaxial layer to said subcollector region, said process including the following steps: deposit, using chemical vapor deposition techniques, a layer of doped polysilicon on the exposed surface of said substrate said dopant being of said first conductivity type; deposit, using chemical vapor deposition techniques a first layer of silicon dioxide on said polysilicon layer; deposit a layer of photoresist on said first layer of silicon dioxide; utilizing photolithography, mask off an intended intrinsic base region, said intended intrinsic base region being spaced between said first and second recessed oxide isolation regions; utilizing the resist layer as a mask employ reactive ion etching to remove the silicon dioxide and polysilicon superimposed over the intended intrinsic base region; ion implant the exposed intrinsic base region with ions of said first conductivity type; chemically vapor deposit a relatively thick silicon dioxide conformal coating on the exposed surface; reactive ion etch an emitter opening on the epitaxial surface above the implanted intrinsic base; ion implant the emitter region with ions of said second conductivity type; and utilize a single heat cycle to anneal the ion implantations and drive in the emitter, intrinsic base, extrinsic base and collector reach through.

REFERENCES:
patent: 4157269 (1979-06-01), Ning et al.
patent: 4234362 (1980-11-01), Riseman
patent: 4305760 (1981-12-01), Trudel
patent: 4313255 (1982-02-01), Shinozaki et al.
Yeh, T. H., IBM-TDB, 22, (1980), 4047.

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