Coating processes – Heat decomposition of applied coating or base material
Patent
1997-08-12
1999-03-23
Cameron, Erma
Coating processes
Heat decomposition of applied coating or base material
427377, 427379, 427387, 524366, 524251, B05D 302
Patent
active
058856544
ABSTRACT:
Proposed is a coating solution for the formation of an interlayer insulating film of silicon dioxide in the manufacture of various kinds of electronic devices having excellent storage stability and coating workability. The principal ingredient of the coating solution, of which the solvent is preferably a dialkyl ether, is a polysilazane compound modified with a trimethylsilylating agent such as hexamethyl disilazane to such an extent that, in the .sup.1 H-NMR spectrometric diagram, the ratio of the area of the peak assignable to SiH.sub.3 to the total area of the peaks assignable to SiH.sub.1 and SiH.sub.2 is in the range from 0.15 to 0.45. An interlayer insulating film can be formed by coating a substrate with the coating solution, drying the coating layer and baking the dried coating layer at 300.degree. to 800.degree. C. in a moisturized atmosphere. The coating solution optionally contains a trialkyl amine compound as an agent to reduce sublimation of the low molecular weight fractions of the polysilazane compound. The reaction of the trialkyl amine and the polysilazane molecules is completed by keeping the coating layer before drying at a temperature of 25.degree. to 100.degree. C. for at least 1 minute.
REFERENCES:
patent: 4756977 (1988-07-01), Haluska et al.
patent: 4840778 (1989-06-01), Arai et al.
patent: 5614271 (1997-03-01), Shibuya et al.
Hagiwara Yoshio
Shibuya Tatsuhiko
Cameron Erma
Tokyo Ohka Kogyo Co. Ltd.
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