Polysilane compositions, methods for their synthesis and...

Details Polysilane compositions, methods for their synthesis and... Polysilane compositions, methods for their synthesis and...

2007-08-14

2011-11-15

Padgett, Marianne L (Department: 1717)

Coating processes

Direct application of electrical, magnetic, wave, or...

Polymerization of coating utilizing direct application of...

C427S493000, C427S515000, C427S554000, C427S555000, C427S558000, C427S559000

Reexamination Certificate

active

08057865

ABSTRACT:
Polysilanes, inks containing the same, and methods for their preparation are disclosed. The polysilane generally has the formula H—[(AHR)n(c—AmHpm−2)q]—H, where each instance of A is independently Si or Ge; R is H, —AaHa+1Ra, Halogen, aryl or substituted aryl; (n+a)≧10 if q=0, q≧3 if n=0, and (n+q)≧6 if both n and q≠0; p is 1 or 2; and m is from 3 to 12. In one aspect, the method generally includes the steps of combining a silane compound of the formula AHaR14−a, the formula AkHgR1′hand/or the formula c—AmHpmR1rmwith a catalyst of the formula R4xR5yMXz(or an immobilized derivative thereof) to form a poly(aryl)silane; then washing the poly(aryl)silane with an aqueous washing composition and contacting the poly(aryl)silane with an adsorbent to remove the metal M. In another aspect, the method includes the steps of halogenating a polyarylsilane to form a halopolysilane; and reducing the halopolysilane with a metal hydride to form the polysilane. The synthesis of semiconductor inks via dehydrocoupling of silanes and/or germanes allows for tuning of the ink properties (e.g., viscosity, boiling point, and surface tension) and for deposition of silicon films or islands by spincoating, inkjetting, dropcasting, etc., with or without the use of UV irradiation.

REFERENCES:
patent: 4052430 (1977-10-01), Yajima et al.
patent: 4276424 (1981-06-01), Peterson, Jr. et al.
patent: 4310482 (1982-01-01), Baney
patent: 4537942 (1985-08-01), Brown-Wensley et al.
patent: 4554180 (1985-11-01), Hirooka
patent: 4611035 (1986-09-01), Brown-Wensley et al.
patent: 4683145 (1987-07-01), Nishimura et al.
patent: 4683146 (1987-07-01), Hirai et al.
patent: 4704444 (1987-11-01), Brown-Wensley et al.
patent: 4726963 (1988-02-01), Ishihara et al.
patent: 4759947 (1988-07-01), Ishihara et al.
patent: 4820788 (1989-04-01), Zeigler
patent: 4822703 (1989-04-01), Badesha et al.
patent: 4830890 (1989-05-01), Kanai
patent: 4835005 (1989-05-01), Hirooka et al.
patent: 4841083 (1989-06-01), Nagai et al.
patent: 4992520 (1991-02-01), Zeigler
patent: 5153295 (1992-10-01), Whitmarsh et al.
patent: 5204380 (1993-04-01), Seyferth et al.
patent: 5358987 (1994-10-01), Kanai et al.
patent: 5700400 (1997-12-01), Ikai et al.
patent: 5798428 (1998-08-01), Schwab et al.
patent: 5866471 (1999-02-01), Beppu et al.
patent: 5942637 (1999-08-01), Boudjouk et al.
patent: 6005036 (1999-12-01), Carrozza et al.
patent: 6140448 (2000-10-01), Choi et al.
patent: 6174982 (2001-01-01), Nishida et al.
patent: 6503570 (2003-01-01), Matsuki et al.
patent: 6514801 (2003-02-01), Yudasaka et al.
patent: 6517911 (2003-02-01), Matsuki
patent: 6518087 (2003-02-01), Furusawa et al.
patent: 6527847 (2003-03-01), Matsuki
patent: 6541354 (2003-04-01), Shimoda et al.
patent: 6610872 (2003-08-01), Choi et al.
patent: 6767775 (2004-07-01), Yudasaka et al.
patent: 6884700 (2005-04-01), Aoki et al.
patent: 6908796 (2005-06-01), Furusawa
patent: 7067069 (2006-06-01), Shiho et al.
patent: 7078276 (2006-07-01), Zurcher et al.
patent: 7152804 (2006-12-01), MacKenzie et al.
patent: 7314513 (2008-01-01), Zurcher et al.
patent: 7387260 (2008-06-01), MacKenzie et al.
patent: 7951892 (2011-05-01), Guo et al.
patent: 2001/0021760 (2001-09-01), Matsuki et al.
patent: 2003/0045632 (2003-03-01), Shiho et al.
patent: 2003/0087110 (2003-05-01), Furusawa et al.
patent: 2003/0148024 (2003-08-01), Kodas et al.
patent: 2003/0229190 (2003-12-01), Aoki et al.
patent: 2004/0029364 (2004-02-01), Aoki et al.
patent: 2004/0248429 (2004-12-01), Aoki
patent: 2005/0176183 (2005-08-01), Aoki
patent: 2005/0181566 (2005-08-01), Machida et al.
patent: 2006/0159859 (2006-07-01), Iwasawa
patent: 2006/0185712 (2006-08-01), Shiho et al.
patent: 2006/0198966 (2006-09-01), Kaino et al.
patent: 1297578 (2001-05-01), None
patent: 1407018 (2003-04-01), None
patent: 3122992 (1982-02-01), None
patent: 1 085 560 (2001-03-01), None
patent: 1 085 579 (2001-03-01), None
patent: 1 087 433 (2001-03-01), None
patent: 1087428 (2001-03-01), None
patent: 1 113 502 (2001-07-01), None
patent: 0 902 030 (2002-10-01), None
patent: 1 284 306 (2003-02-01), None
patent: 1 357 154 (2003-10-01), None
patent: 2077710 (1981-12-01), None
patent: 57-27915 (1982-02-01), None
patent: 6-242612 (1985-12-01), None
patent: 4-334551 (1992-11-01), None
patent: 5-230219 (1993-09-01), None
patent: 6-191821 (1994-07-01), None
patent: 7-267621 (1995-10-01), None
patent: 9-45922 (1997-02-01), None
patent: 9-237927 (1997-09-01), None
patent: 11-79727 (1999-03-01), None
patent: 11-171528 (1999-06-01), None
patent: 2000-7317 (2000-01-01), None
patent: 2000-31066 (2000-01-01), None
patent: 2002-203794 (2002-07-01), None
patent: 2002-246384 (2002-08-01), None
patent: 2003-55556 (2003-02-01), None
patent: 2003-92297 (2003-03-01), None
patent: 2003-124486 (2003-04-01), None
patent: 2003-313299 (2003-11-01), None
patent: 2003-318120 (2003-11-01), None
patent: 2004-311945 (2004-11-01), None
patent: 2005-219981 (2005-08-01), None
patent: 00/59022 (2000-10-01), None
patent: 0059014 (2000-10-01), None
patent: 0059041 (2000-10-01), None
patent: 2004/110929 (2004-12-01), None
Patent abstracts of Japan & partial machine translation of JP 2000-31066 A by Takadera Tsutomu et al., published Jan. 28, 2000 (not translated after end of[0071]).
Tatsuro Beppu, Shuji Hayase, Toshiro Hiraoka, Atsushi Kamata and Kenji Sano; Semiconductor Film Forming Method and Solar Cell Manufacturing Method; Patent Abstracts of Japan; Publication No. 09-237927; Publication Date: Sep. 9, 1997; Japan Patent Office; Japan.
Tamejirou Hiyama and Yasuo Hatanaka; Production of Alpha, Omega-Dihydropolysilane; Patent Abstracts of Japan; Publication No. 05-230219; Publication Date: Sep. 7, 1993; Japan Patent Office; Japan.
Takashi Aoki; Method of Preparing Higher Order Silane Solution, Method of Forming Silicon Film, Silicon Film, Thin Film Transistor (TFT), and Electro-Optic Device; Patent Abstracts of Japan; Publication No. 2005-219981; Publication Date: Aug. 18, 2005; Japan Patent Office; Japan.
Ryuji Sato, Yasuo Nomura, Masashi Nakajima and Yoshiharu Okumura; Polymerization Catalyst of Hydrosilane; Patent Abstracts of Japan; Publication No. 04-334551; Publication Date: Nov. 20, 1992; Japan Patent Office; Japan.
R.D. Miller and R. Sooriyakumaran; Soluble Alkyl Substituted Polygermanes: Thermochromic Behavior; Journal of Polymer Science: Part A; Polymer Chemistry; vol. 25; pp. 111-125; 1987; John Wiley & Sons, Inc.
E. Hengge and H. Firgo; “An Electrochemical Method for the Synthesis of Silicon-Silicon Bonds”; Journal of Organometallic Chemistry; vol. 212; pp. 155-161; 1981; Elsevier Sequoia S.A.; Netherlands.
R.D. Miller, D. Thompson, R. Sooriyakumaran and G.N. Fickes; The Synthesis of Soluble, Substituted Silane High Polymers by Wurtz Coupling Techniques; Journal of Polymer Science: Part A: Polymer Chemistry; vol. 29; pp. 813-824; 1991; John Wiley & Sons, Inc.
R.D. Miller and P.K. Jenkner; “Sacrificial Additives in the Wurtz Synthesis of Polysilanes”; Macromolecules; vol. 27; pp. 5921-5923; 1994; American Chemical Society.
Robert D. Miller and Josef Michl; “Polysilane High Polymers; Chemical Reviews”; vol. 89, No. 6; pp. 1359-1410; 1989; American Chemical Society.
T. Don Tilley; The Coordination Polymerization of Silanes to Polysilanes by a “σ-Bond Metathesis” Mechanism. Implications for Linear Chain Growth; pp. 22-29; Acc. Chem. Res.; vol. 26, No. 1, 1993; American Chemical Society.
Vladimir K. Dioumaev and John F. Harrod; A Systematic Analysis of the Structure-Reactivity Trends for Some ‘Cation-Like’ Early Transition Metal Catalysts for Dehydropolymerization of Silanes; Journal of Organometallic Chemistry, 521 (1996) 133-143; Elsevier Science S.A.
Qingzheng Wang and Joyce Y. Corey; Dehydrocoupling Reactions of Hydrosilanes with Group 4 Mettallocenes Cp2MY2 (M=Ti, Zr, Hf; Y=F, OPh, NMe2); Can. J. Chem., vol. 78, 2000; pp. 1434-1440; NRC Canada.
Masahiro Furusawa et al.; Formation method of silicon thin film; Paten

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