Polymeric resist mask composition

Details Polymeric resist mask composition Polymeric resist mask composition

1977-01-19

1978-11-14

Newsome, John H.

Stock material or miscellaneous articles

Composite

Of fluorinated addition polymer from unsaturated monomers

96 362, 427 43, 427273, 428451, B05D 306

Patent

active

041256727

ABSTRACT:
A polymeric resist mask composition thinly coated on a semiconductor substrate, wherein the prescribed portions of said resist mask are exposed to high energy rays such as electron beams, X-rays or ultraviolet rays for degradation, and the degraded portions of the resist mask are removed by an organic solvent to present a prescribed resist mask pattern on the semiconductor substrate, which comprises a halogenated polymethacrylic ester whose composition is expressed by the general formula ##STR1## (WHERE R denotes a halogenated alkyl radical including a halogen element selected from the group consisting of fluorine, chlorine and bromine, and at least one fluorine atom in case said radical contains chlorine or bromine and n indicates an average polymerization degree of 100 to 20,000) and an organic solvent for said halogenated polymethacrylate.

REFERENCES:
patent: 3535137 (1970-10-01), Haller et al.
patent: 3632400 (1972-01-01), Burlant
patent: 3743842 (1973-07-01), Smith et al.
patent: 3993834 (1976-11-01), Chimura et al.
patent: 4011351 (1977-03-01), Gipstein et al.
patent: 4061829 (1977-12-01), Taylor

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