Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2003-11-13
2009-11-24
Landau, Matthew C (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S040000, C257S288000, C257SE21005, C257SE51006, C257SE51027, C438S099000
Reexamination Certificate
active
07622789
ABSTRACT:
The invention relates to a polymer transistor arrangement, an integrated circuit arrangement and a method for producing a polymer transistor arrangement. The polymer transistor arrangement contains a polymer transistor formed in and/or on a substrate. The polymer transistor contains a first source/drain region, a second source/drain region, a channel region between the first and second source/drain regions, a gate region and a gate-insulating layer between channel region and gate region. A drive circuit of the polymer transistor arrangement is set up in such a way that it provides the source/drain regions and the gate region with electrical potentials such that the junction between at least one of the source/drain regions and the channel region can be operated as a diode.
REFERENCES:
patent: 5596208 (1997-01-01), Dodabalapur et al.
patent: 5796121 (1998-08-01), Gates
patent: 5912473 (1999-06-01), Wakita et al.
patent: 5981970 (1999-11-01), Dimitrakopoulos et al.
patent: 6150668 (2000-11-01), Bao et al.
patent: 6455873 (2002-09-01), Lonergan
patent: 6720572 (2004-04-01), Jackson et al.
patent: 2003/0218166 (2003-11-01), Tsutsui
patent: 2004/0012018 (2004-01-01), Tanabe
patent: 2004/0191952 (2004-09-01), Shtein et al.
patent: 2004/0222412 (2004-11-01), Bai et al.
patent: WO-01/01452 (2001-01-01), None
C.D. Dimitrakopoulos, et al.; “Organic thin-film transistors: A review of recent advances”; IBM J. Res. & Dev., vol. 45 No. 1, Jan. 2001; pp. 11-27.
P.V. Necliudov, et al.; “Modeling of organic thin film transistors of different designs”; Journal of Applied Physics, vol. 88, No. 11, Dec. 1, 2000, pp. 6594-6597.
D. Nuhrmann; “Das grosse Werkbuch Elektronik ist 20 Jahre alt”, vol. 2, 1998, Franzis 'Verlag Poing, ISBN 3 7723-6547-7, pp. 1415-1423.
U. Tietze, C. Schenk “Halbeiterschaltungstechnik”, Springer-Verlag, Berlin, 1993, pp. 555-560.
Howard E. Katz, et al.; “Organic field-effect transistors with polarizable gate insulators”; Journal of Applied Physics, vol. 91, No. 3, Feb. 1, 2002; pp. 1572-1576.
Dickstein , Shapiro, LLP.
Infineon - Technologies AG
Landau Matthew C
Snow Colleen E
LandOfFree
Polymer transistor arrangement, integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polymer transistor arrangement, integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polymer transistor arrangement, integrated circuit... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4127851