Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Responsive to non-optical – non-electrical signal
Reexamination Certificate
2005-04-05
2005-04-05
Dang, Phuc T. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Responsive to non-optical, non-electrical signal
C257S522000, C257S758000, C438S496000, C438S796000
Reexamination Certificate
active
06876017
ABSTRACT:
Method and structure for optimizing dual damascene patterning with polymeric dielectric materials are disclosed. Certain embodiments of the invention comprise polymeric sacrificial light absorbing materials (“polymer SLAM”) functionalized to have a controllable solubility switch wherein such polymeric materials have substantially the same etch rate as conventionally utilized polymeric dielectric materials, and subsequent to chemical modification of solubility-modifying protecting groups comprising the SLAM materials by thermal treatment or in-situ generation of an acid, such SLAM materials become soluble in weak bases, such as those conventionally utilized to remove materials in lithography treatments.
REFERENCES:
patent: 6448177 (2002-09-01), Morrow et al.
patent: 6472315 (2002-10-01), Nguyen et al.
patent: 6506962 (2003-01-01), Bougri et al.
Dang Phuc T.
Intel Corporation
Plimier Michael D.
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