Polymer memory having a ferroelectric polymer memory...

Details Polymer memory having a ferroelectric polymer memory... Polymer memory having a ferroelectric polymer memory...

2006-05-17

2008-08-05

Nguyen, Dao H (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S128000, C438S240000, C438S780000, C257S209000, C257S295000, C257SE21002, C257SE21208, C365S158000, C365S185130

Reexamination Certificate

active

07407819

ABSTRACT:
A polymer memory and its method of manufacture are provided. One multi-layer construction of the polymer memory has two sets of word lines and a set of bit lines between the word lines. The word lines of each set of word lines have center lines that are spaced by a first distance from one another, and the bit lines have center lines spaced by a second distance from one another, the second distance being less than the first distance. Three masking steps are required to manufacture the three layers of lines. Older-technology machinery and masks are used to form the two layers of word lines, and new-technology machinery and masks are used to manufacture the bit lines.

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