Polymer memory device with variable period of retention time

Details Polymer memory device with variable period of retention time Polymer memory device with variable period of retention time

2007-04-03

2007-04-03

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S642000, C257S798000

Reexamination Certificate

active

10919572

ABSTRACT:
Systems and methodologies are provided for of enabling a polymer memory cell to exhibit variable retention times for stored data therein. Such setting of retention time can depend upon a programming mode and/or type of material employed in the polymer memory cell. Short retention times can be obtained by programming the polymer memory cell via a low current or a low electrical field. Similarly, long retention times can be obtained by employing a high current or electrical field to program the polymer memory cell.

REFERENCES:
patent: 6656763 (2003-12-01), Oblesby et al.
patent: 2003/0053350 (2003-03-01), Krieger et al.
patent: 2003/0173612 (2003-09-01), Krieger et al.
patent: 2004/0102038 (2004-05-01), Oblesby et al.
International Search Report dated Dec. 14, 2005 mailed Dec. 21, 2005 for PCT Application Serial No. PCT/US2005/028339, 3 Pages.
International Search Report dated Jan. 13, 2006 and mailed Feb. 21, 2006 for PCT Application Serial No. 2005/028339, 8 pages.

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