Polymer inactivation method for polycrystalline silicon...

Details Polymer inactivation method for polycrystalline silicon... Polymer inactivation method for polycrystalline silicon...

2011-01-25

2011-01-25

Vanoy, Timothy C (Department: 1793)

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Adhesive outermost layer

C134S002000, C134S030000, C134S031000, C134S041000

Reexamination Certificate

active

07875349

ABSTRACT:
A polymer inactivation method for a polycrystalline silicon manufacturing device, wherein humidified gas such as water vapor and humidified nitrogen gas is supplied into a reacting furnace for manufacturing polycrystalline silicon to hydrolyze polymers adhered to an inner surface of the reacting furnace. It is preferable that a furnace wall of the reacting furnace is heated when the humidified gas is supplied.

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patent: 03-285811 (1991-12-01), None
European Search Report dated Jun. 29, 2009, issued on the corresponding European patent application No. 09156329.6.

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