Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-05-23
2006-05-23
Guerrero, Maria F. (Department: 2822)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C438S259000, C438S261000, C438S624000, C438S623000, C438S780000
Reexamination Certificate
active
07049153
ABSTRACT:
Integrated memory circuits, key components in thousands of electronic and computer products, have been made using ferroelectric materials, which offer faster write cycles and lower power requirements than some other materials. However, the present inventors have recognized, for example, that conventional techniques for working with the polymers produce polymer layers with thickness variations that compromise performance and manufacturing yield. Accordingly, the present inventors devised unique methods and structures for polymer-based ferroelectric memories. One exemplary method entails forming an insulative layer on a substrate, forming two or more first conductive structures, with at least two of the first conductive structures separated by a gap, forming a gap-filling structure within the gap, and forming a polymer-based ferroelectric layer over the gap-filling structure and the first conductive structures. In some embodiments, the gap-filling structure is a polymer, a spin-on-glass, or a flow-fill oxide.
REFERENCES:
patent: 4651310 (1987-03-01), Kaneko et al.
patent: 5008541 (1991-04-01), Audaire et al.
patent: 6052354 (2000-04-01), Gudesen et al.
patent: 6055180 (2000-04-01), Gudesen et al.
patent: 6064615 (2000-05-01), Gudesen
patent: 6084850 (2000-07-01), Gudesen et al.
patent: 6088319 (2000-07-01), Gudesen
patent: 6219160 (2001-04-01), Nordal et al.
patent: 6326936 (2001-12-01), Inganas et al.
patent: 6403396 (2002-06-01), Gudesen et al.
patent: 6420190 (2002-07-01), Shimoda et al.
patent: 6548343 (2003-04-01), Summerfelt et al.
patent: 6576479 (2003-06-01), Chen et al.
patent: 6627944 (2003-09-01), Mandell et al.
patent: 6670659 (2003-12-01), Gudesen et al.
patent: 6773929 (2004-08-01), Oh et al.
patent: 6878980 (2005-04-01), Gudesen et al.
patent: 2002/0163057 (2002-11-01), Bulovic et al.
patent: 2002/0163828 (2002-11-01), Krieger et al.
patent: 2002/0163829 (2002-11-01), Bulovic et al.
patent: 2002/0163830 (2002-11-01), Bulovic et al.
patent: 2002/0163831 (2002-11-01), Krieger et al.
patent: 2003/0155602 (2003-08-01), Krieger et al.
patent: 2004/0026729 (2004-02-01), Krieger et al.
Amanuma, Kazushi , et al., “Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell for 0.25μm CMOS Embedded FeRAM”,IEEE,(1998),pp. 363-366.
Choi, Jaewu , et al., “Changes in Metallicity and Electronic Structure Across the Surface Ferroelectric Transition of Ultrathin Crystalline Poly(vinylidene Fluoride-Trifluoroethylene) Copolymers”,The American Physical Society,Physical Review Letters, vol. 80, No. 6,(Feb. 9, 1998),pp. 1328-1331.
Guy, Ian , et al., “C-V Properties of MIS Structures with a Ferroelectric Polymer Insulating Layer”,Integrated Ferroelectrics,vol. 9,(1995),pp. 199-205.
Inoue, Naoya , et al., “Low thermal-budget fabrication of sputtered-PZT capacitor on multilevel interconnects for embedded FeRAM”,International Electronic Devices Meeting,(Dec. 2000),pp. 797-800.
Ishiwara, Hiroshi , “Proposal of a Novel Ferroelectric-Gate Field Effect Transistor with Separated Functions for Data read-Out and Data Storage”,Abstracts of the 1998 International Conference of Solid State Devices and Material,(1998),pp. 222-223.
Jung, Dongjin , et al., “A Novel Ir/IrO2/Pt-PZT/IrO2/Ir Capacitor for a Highly Reliable Mega-Scale FRAM”,International Electronic Devices Meeting,(Dec. 2000),pp. 801-804.
Katoh, Y , et al., “Non-Volatile FCG (Ferroelectric-Capacitor and Transistor-Gate Connection) Memory Cell with Non-Destructive Read-Out Operation”,Symposium on VLSI Technology,Digest of Technical Papers,(1996),pp. 56-57.
Kobayashi, S , et al., “64Kbit CMVP FeRAM macro with reliable retention/imprint characteristics”,International Electronic Devices Meeting,(Dec. 2000),pp.783-786.
Nakamura, Takashi , et al., “A Single-Transistor Ferroelectric Memory Cell”,IEEE International Solid-State Circuits Conference,Digest of Technical Papers,(1995),pp. 68-69, 340.
Tokumitsu, Eisuke , et al., “Nonvolatile ferroelectric-gate field-effect transistors using SrBi2Ta2O9/Pt/SrTa2O6/SiON/Si structures”,Applied Physics Letters,vol. 75, No. 4, (Jul. 26, 1999),pp. 575-577.
Xia, Feng , et al., “Thickness dependence of ferroelectric polarization switching in poly(vinylidene fluoride-trifluoroethylene)spin cast films”,Applied Physics Letters,vol. 78, No. 8(Feb. 19, 2001),pp. 1122-1124.
Yoon, Sung-Min , et al., “A Novel FET-Type Ferroelectric Memory with Excellent Data Retention Characteristics”,International Electronic Devices Meeting,(Dec. 2000),pp. 317-320.
Yoon, Sung-Min , et al., “Improvement of Memory Retention Characteristics in Ferroelectric Neuron Circuits Using a Pt/SrBi2Ta2O9/Pt/Ti/SiO2Si Structure-Field Effect Transistor as a Synapse Device”,Japanese Journal of Applied Physics,vol. 39,(Apr. 2000),pp. 2119-2124.
Agarwal Vishnu K.
Rhodes Howard E.
Guerrero Maria F.
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
LandOfFree
Polymer-based ferroelectric memory does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polymer-based ferroelectric memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polymer-based ferroelectric memory will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3542784