Polyimide inter-metal dielectric process

Details Polyimide inter-metal dielectric process Polyimide inter-metal dielectric process

1983-10-07

1985-01-22

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

156643, 156644, 156653, 156657, 1566591, 156668, 204192E, 427 85, 427 89, 427 95, 430313, 430314, H01L 21312

Patent

active

044952201

ABSTRACT:
A technique for employing polyimide as an inter-metal dielectric layer, while avoiding the difficulties usually associated with this material. An upper layer of silicon dioxide is employed as a hard mask over the polyimide, and is highly doped with phosphorous to prevent thermal cracking. Via holes are formed in a multi-stage etching process that includes a first dry-etching step that effects isotropic etching to form holes with desirably sloped sidewalls, and a second dry-etching step that effects anisotropic etching to extend the via holes through to a lower metal surface without significantly enlarging the holes in width. Finally, a dry-etching step is used to remove any residue of polyimide and to strip the silicon dioxide layer from over the polyimide. The bottom of the hole is then sputter-etched prior to metallization. In one preferred form of the method, a lower layer of silicon dioxide is formed between the lower metal layer and the polyimide layer, to facilitate removal of polyimide residue and to act as a barrier between the lower metal and the polyimide.

REFERENCES:
patent: 3700497 (1972-10-01), Epifano
patent: 3985597 (1976-10-01), Zielinski
patent: 4328262 (1982-05-01), Kurahasi
patent: 4357203 (1982-11-01), Zilez
patent: 4430153 (1984-02-01), Gleason

Affiliated with

Also associated with

Rating

Polyimide inter-metal dielectric process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polyimide inter-metal dielectric process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polyimide inter-metal dielectric process will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-566784