Polyemitter structure with improved interface control

Details Polyemitter structure with improved interface control Polyemitter structure with improved interface control

1993-08-05

1994-12-20

Turner, A. A.

Stock material or miscellaneous articles

Web or sheet containing structurally defined element or...

Physical dimension specified

257537, 257538, 257636, 257646, 361322, 428446, 428469, 428472, 428701, 428702, 428698, H01L 2972

Patent

active

053744810

ABSTRACT:
A polyemitter structure having a thin interfacial layer deposited between the polysilicon emitter contact and the crystalline silicon emitter, as opposed to a regrown SiO.sub.x layer, has improved reproducibility and performance characteristics. A n-doped hydrogenated microcrystalline silicon film can be used as the deposited interfacial film between a crystalline silicon emitter and a polycrystalline silicon contact.

REFERENCES:
patent: 3881242 (1975-05-01), Nuttall
patent: 4133701 (1979-01-01), Greenstein et al.
patent: 4208781 (1924-06-01), Rao et al.
patent: 4357179 (1982-11-01), Adams et al.
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4668530 (1987-05-01), Reif et al.
patent: 4755480 (1988-07-01), Yan et al.
patent: 4874716 (1989-10-01), Rao
patent: 4966866 (1990-10-01), Mikata et al.
patent: 4977104 (1990-12-01), Sawada et al.
patent: 5028973 (1991-07-01), Bajor
Kitagawa et al., Low temperature Preparation of Doped Hydrogenated Amorphous Silican Films by AC-Biased Microwave ECR Plasma CVD Method Jap. J. of Applied Physics, vol. 29, No. 10, Oct., 1990, pp. L1753-L1756.
Collins et al., 1989, J. Vac. Sci. Technol. B. 7:1155-1164.
Collins, 1986. Appl. Phys. Lett. 48:843-845.
Ronsheim et al., J. Appl. Phys., 69(1) Jan. 1991, pp. 495-498.
Fujioka, Fujitsu Sci. Tech. J., 24, 4, Dec. 1988, pp. 391-397.
Graaf et al. "The SIS Tunnel Emitter: A Theory for Emitters with Thin Interface Layer" IEEE Transactions on Electronic Devices. vol. ED-26, No. 11, Nov. 1979.

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