Active solid-state devices (e.g. – transistors – solid-state diode – With specified impurity concentration gradient – With high resistivity
Reexamination Certificate
2007-04-17
2007-04-17
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
With specified impurity concentration gradient
With high resistivity
C257S461000, C257SE31061, C257SE29336
Reexamination Certificate
active
11017053
ABSTRACT:
An integrated circuit device for converting an incident optical signal into an electrical signal comprises a semiconductor substrate, a well region formed inside the semiconductor substrate, a dielectric layer formed over the well region, and a layer of polysilicon for receiving the incident optical signal, formed over the dielectric layer, including a p-type portion, an n-type portion and an undoped portion disposed between the p-type and n-type portions, wherein the well region is biased to control the layer of polysilicon for providing the electrical signal.
REFERENCES:
patent: 5225359 (1993-07-01), DeLong
patent: 6232163 (2001-05-01), Voldman et al.
patent: 6690065 (2004-02-01), Chang et al.
patent: 2005/0077577 (2005-04-01), Manna et al.
Chang Chyh-Yih
Chuang Che-Hao
Ker Ming-Dou
Shiu Yu-Da
Akin Gump Strauss Hauer & Feld & LLP
Flynn Nathan J.
Industrial Technology Research Institute
Tran Tan
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