Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2007-02-27
2007-02-27
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257SE29003, C257S075000, C257S070000
Reexamination Certificate
active
10694030
ABSTRACT:
A polycrystalline silicon thin film to be used in display devices, the thin film having adjacent primary grain boundaries that are not parallel to each other, wherein an area surrounded by the primary grain boundaries is larger than 1 μm2, a fabrication method of the polycrystalline silicon thin film, and a thin film transistor fabricated using the method.
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Chinese Office Action issued on Feb. 10, 2006, in Chinese Patent Application No. 2004100036565 (in Chinese with English translation).
English Abstract of CN1389600A cited in Chinese Office Action issued on Feb. 10, 2006, in Chinese Patent Application No. 2004100036565.
Park Hye Hyang
Park Ji Yong
Landau Matthew C.
Parker Kenneth
Samsung SDI & Co., Ltd.
Stein, McEwen & Bui LLP
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