Metal treatment – Barrier layer stock material – p-n type
Patent
1977-06-29
1978-12-12
Rutledge, L. Dewayne
Metal treatment
Barrier layer stock material, p-n type
148 15, 252 623E, 252950, 357 59, 357 91, B05D 306, H01L 2714
Patent
active
041294637
ABSTRACT:
A NTD semiconductor material comprising polycrystalline silicon having a mean grain size less than 1000 microns and containing phosphorus dispersed uniformly throughout the silicon rather than at the grain boundaries.
REFERENCES:
patent: 3467557 (1969-09-01), Sterling
patent: 3961997 (1976-06-01), Chu
patent: 3978333 (1976-08-01), Crisman et al.
patent: 4027051 (1977-05-01), Reuschel et al.
patent: 4042454 (1977-08-01), Haas et al.
patent: 4058418 (1977-11-01), Lindmayer et al.
Cuomo et al., "Polycrystalline Semiconductor Solar Cell" IBM-TDB, vol. 17 (1975) 2455.
DiStefano et al, "Reduction of G.B. Recombination in Poly-Si Solar Cells," Appl. Phys. Letts. 30 (1977) April, 351.
Chu et al., "Si Solar Cell on Metr. Si", IEEE. Trans. vol. ED-24, (1977) April, 442.
Chu, T. L., "Reducing G.B. Effects in Poly-Si Solar Cells" Appl. Phys. Letts. 29 (1976) 675.
Soclof et al., "G.B. and Impurity Effects in Low Cost Si Solar Cells," Conf. Record, 11th EEE Photospecialist Conf., May 1975.
Card et al.,"... G.B. in Poly Semiconductors", Digest IEEE Int'l Electron Device Meeting, Wash., D.C., Dec. 1976.
Tech. Inf. on SILSO" Poly Si for high efficiency Solar cells", Wacker Chemibronic, 6/1976.
Fisher et al, "Low Cost Solar Cells Based Si", IEEE Trans. vol. 24 ED, (1977) April, 438.
Cleland John W.
Westbrook Russell D.
Wood Richard F.
Young Rosa T.
Carlson Dean E.
Hamel Stephen D.
Roy Upendra
Rutledge L. Dewayne
The United States of America as represented by the United States
LandOfFree
Polycrystalline silicon semiconducting material by nuclear trans does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polycrystalline silicon semiconducting material by nuclear trans, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline silicon semiconducting material by nuclear trans will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-830299