Polycrystalline silicon Schottky diode array

Details Polycrystalline silicon Schottky diode array Polycrystalline silicon Schottky diode array

1985-11-04

1986-12-09

Edlow, Martin H.

357 4, 357 49, 357 59, 357 67, 357 71, 357 90, H01L 2948, H01L 2712, H01L 2710, H01L 2904

Patent

active

046283390

ABSTRACT:
A process and structure are disclosed which are suitable for forming large arrays of Schottky diodes at desired locations between mutually perpendicular strips of aluminum and strips of metal-silicide. The invention is particularly useful in creating read-only memories and programmable logic arrays, and allows fabrication of Schottky diodes more compactly than previous structures.

REFERENCES:
patent: 4220961 (1980-09-01), Werner
patent: 4392150 (1983-07-01), Correges
patent: 4400713 (1983-08-01), Bauge et al.

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