Polycrystalline silicon rod for floating zone method and process

Details Polycrystalline silicon rod for floating zone method and process Polycrystalline silicon rod for floating zone method and process

1992-11-30

1994-05-10

Chaudhuri, Olik

Chemistry of inorganic compounds

Silicon or compound thereof

423348, 117 50, 117 51, C01F 300

Patent

active

053105311

ABSTRACT:
A polycrystalline silicon rod for preparing a monocrystalline silicon rod by a floating zone method, wherein at least a central portion of the section of the polycrystalline silicon rod has coarsened silicon monocrystalline grains around the center over an area of or above the minimum section of a molten zone during progress in the floating zone method and the outer peripheral portion of the coarsened region has fine monocrystalline grains. From the polycrystalline silicon rod, the monocrystalline silicon rod for a semiconductor is prepared with a high yield by the single floating zone method.

REFERENCES:
patent: 3773499 (1973-11-01), Melnikov et al.
patent: 4196041 (1980-04-01), Baghdadi et al.
patent: 4312700 (1982-01-01), Helmreich et al.
patent: 4722764 (1988-02-01), Herzer et al.
patent: 4921026 (1990-05-01), Flagella et al.

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