Polycrystalline silicon rod and method for processing the same

Single-crystal – oriented-crystal – and epitaxy growth processes; – Apparatus – For crystallization from liquid or supercritical state

Reexamination Certificate

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Details

C117S218000, C117S900000, C117S911000

Reexamination Certificate

active

07455731

ABSTRACT:
A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.

REFERENCES:
patent: 5888293 (1999-03-01), Fujiyama et al.
patent: 5948164 (1999-09-01), Lida et al.
patent: 6183556 (2001-02-01), Aydelott et al.
patent: 6197108 (2001-03-01), Lino et al.
patent: 6444028 (2002-09-01), Frauenknecht et al.
patent: 08310892 (1996-11-01), None
patent: 9-255467 (1997-09-01), None
patent: 2000-313690 (2000-11-01), None

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