Polycrystalline silicon rod and method for processing the same

Details Polycrystalline silicon rod and method for processing the same Polycrystalline silicon rod and method for processing the same

2006-05-01

2008-11-25

Hiteshew, Felisa C (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Apparatus

For crystallization from liquid or supercritical state

C117S218000, C117S900000, C117S911000

Reexamination Certificate

active

07455731

ABSTRACT:
A polycrystalline silicon rod according to present invention has a structure for hanging of polycrystalline silicon rods to each other end-to-end, so that the efficiency of melting polycrystalline silicon can be increased considerably. A polycrystalline silicon rod obtained by entirely or partially removing a peripheral portion from the rod to leave a central portion, and processing the central portion, preferably, the peripheral portion is removed by grinding in an amount corresponding to 10 to 60% of the diameter of the rod, and then subjected to groove-forming processing. This makes annealing unnecessary.

REFERENCES:
patent: 5888293 (1999-03-01), Fujiyama et al.
patent: 5948164 (1999-09-01), Lida et al.
patent: 6183556 (2001-02-01), Aydelott et al.
patent: 6197108 (2001-03-01), Lino et al.
patent: 6444028 (2002-09-01), Frauenknecht et al.
patent: 08310892 (1996-11-01), None
patent: 9-255467 (1997-09-01), None
patent: 2000-313690 (2000-11-01), None

Affiliated with

Also associated with

Rating

Polycrystalline silicon rod and method for processing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polycrystalline silicon rod and method for processing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline silicon rod and method for processing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4027289