Polycrystalline silicon resistor having limited lateral diffusio

Details Polycrystalline silicon resistor having limited lateral diffusio Polycrystalline silicon resistor having limited lateral diffusio

1983-06-03

1984-12-18

Barr, Josephine L.

Coating processes

Electrical product produced

Resistor for current control

338 20, 338308, 252512, 252518, 427 96, 427103, 4271261, 427123, 29610R, 29620, B05D 512

Patent

active

044891040

ABSTRACT:
An improved polycrystalline silicon resistor having limited lateral diffusion, integrated circuits containing such resistors, and a method of their preparation is disclosed. The polysilicon resistor is formed by first doping the polysilicon layer with a p or n type impurity and thereafter neutralizing the treated layer with impurities of the other type so as to form a device wherein the concentration gradient between the resistor region of the aforesaid layer and its environment is low. The low concentration gradient reduces lateral diffusion during manufacture, thereby permitting manufacture of integrated circuits of higher circuit density and resistors with smaller dimensions, lower temperature coefficients and higher reliability.

REFERENCES:
patent: 4088799 (1978-05-01), Kurtin
patent: 4120808 (1978-10-01), Byrum et al.
patent: 4147668 (1979-04-01), Chiklis
patent: 4148761 (1979-04-01), Kazmierowicz
patent: 4166279 (1979-08-01), Gangulee
patent: 4392992 (1983-07-01), Paulson et al.

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