Polycrystalline silicon resistor having limited lateral diffusio

Details Polycrystalline silicon resistor having limited lateral diffusio Polycrystalline silicon resistor having limited lateral diffusio

1986-05-15

1987-06-16

Barr, Josephine L.

Compositions

Electrically conductive or emissive compositions

Free metal containing

338 20, 428901, H01B 106

Patent

active

046735313

ABSTRACT:
An improved polycrystalline silicon resistor having limited lateral diffusion, integrated circuits containing such resistors, and a method of their preparation is disclosed. The polysilicon resistor is formed by first doping the polysilicon layer with a p or n type impurity and thereafter neutralizing the treated layer with impurities of the other type so as to form a device wherein the concentration gradient between the resistor region of the aforesaid layer and its environment is low. The low concentration gradient reduces lateral diffusion during manufacture, thereby permitting manufacture of integrated circuits of higher circuit density and resistors with smaller dimensions, lower temperature coefficients and higher reliability.

REFERENCES:
Solid State Electronics, vol. 27, No. 11, pp. 995-1001, 1984, Lee et al.
Solid State Electronics, vol. 26, No. 7, pp. 657-665, 1983, Huang et al.
"Annealing Characteristics of Boron- and Phosphorus-Implanted Polycrystalline Silicon", Gen. Motors Corporation, pp. 5167-5170, 1976, Seto.
"Conduction Properties of Chemically Deposited Polycrystalline Silicon", Mitsubishi Electric Corporation, Yoshihara et al, pp. 1603-1607.
"Modern Microelectronic Circuit Design", vol. 1, M. Fogiel, 1981, pp. 334-336.
"Modeling and Optimization of Monolithic Polycrystalline Resistors", Lu et al, IEEE Transactions on Electronic Devices, vol. Ed-28, No. 7, Jul. 1981, pp. 818-830.

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