Polycrystalline silicon resistor for use in a semiconductor inte

Details Polycrystalline silicon resistor for use in a semiconductor inte Polycrystalline silicon resistor for use in a semiconductor inte

1991-04-08

1993-05-25

LaRoche, Eugene R.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257773, 257 49, H01L 2702, H01L 2122

Patent

active

052144976

ABSTRACT:
A semiconductor device including a polycrystalline silicone resistor which has a resistance of 40 k.OMEGA.-800 k.OMEGA. and which is formed by a polycrystalline silicon film having a specific resistivity of 0.01 .OMEGA..cm-0.1 .OMEGA..cm. The resistor having the above resistance, which has previously been difficult to fabricate, can be fabricated with a high accuracy, so it is very useful for several kinds of semiconductor integrated circuits such as bipolar memory.

REFERENCES:
patent: 3902926 (1975-09-01), Perloff et al.
patent: 3946418 (1976-03-01), Sigsbee et al.
patent: 4001762 (1977-01-01), Aoki et al.
patent: 4063210 (1977-12-01), Collver
patent: 4065742 (1977-12-01), Kendall et al.
patent: 4110776 (1978-08-01), Rao et al.
patent: 4184172 (1980-01-01), Raffel et al.
patent: 4209716 (1980-06-01), Raymond, Jr.
patent: 4242697 (1980-12-01), Berthold et al.
patent: 4261004 (1981-04-01), Masuhara et al.
patent: 4317091 (1982-02-01), Dahlberg
patent: 4326213 (1982-04-01), Shirai et al.
patent: 4367580 (1983-01-01), Guterman
patent: 4416049 (1983-11-01), McElroy
patent: 4446613 (1984-05-01), Beinglass et al.
patent: 4490734 (1984-12-01), Yamada
patent: 4502894 (1985-03-01), Seto et al.
patent: 4528582 (1985-07-01), Cohen et al.
patent: 4544937 (1985-10-01), Kroger
patent: 4575923 (1986-03-01), Arnold
patent: 4609835 (1986-09-01), Sakai et al.
patent: 4620212 (1986-10-01), Ogasawara
patent: 4673531 (1987-06-01), Lee
patent: 4762801 (1988-08-01), Kapoor

Affiliated with

Also associated with

Rating

Polycrystalline silicon resistor for use in a semiconductor inte does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polycrystalline silicon resistor for use in a semiconductor inte, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline silicon resistor for use in a semiconductor inte will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-901422