Polycrystalline silicon production

Details Polycrystalline silicon production Polycrystalline silicon production

1980-05-09

1982-03-23

Cooper, Jack

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

204164, 423342, 423DIG10, 427 39, 427 86, C01B 3302, C01B 33107

Patent

active

043212468

ABSTRACT:
Polycrystalline silicon is produced by a high pressure plasma process. A silicon halide or halosilane is reacted with hydrogen in the presence of a high pressure plasma to deposit silicon on a heated substrate. The effluent from this reaction is collected, the silicon-bearing compounds separated out, and re-introduced to the deposition reaction. The initial silicon bearing compound can be inexpensive silicon tetrachloride. Maximum utilization of all silicon bearing reaction products maximizes polycrystalline silicon production efficiency.

REFERENCES:
patent: 3840750 (1974-10-01), Davis et al.
patent: 3933985 (1976-01-01), Rodgers
patent: 4102985 (1978-07-01), Harvey
patent: 4170667 (1979-10-01), Rodgers

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