Polycrystalline silicon pressure transducer

Details Polycrystalline silicon pressure transducer Polycrystalline silicon pressure transducer

1974-11-25

1976-02-10

Miller, Jr., Stanley D.

357 55, 357 59, H01L 2984, H01L 2906, H01L 2904

Patent

active

039381757

ABSTRACT:
A semiconductor pressure transducer having a polycrystalline silicon diaphragm providing an extremely pressure sensitive and temperature stable device, and a method of making the same. The polycrystalline silicon can easily be vapor deposited on an etch resistant layer covering a surface of a wafer or base, preferably monocrystalline silicon. Such vapor deposition of the polycrystalline silicon more accurately and consistently defines the thickness of the diaphragm than can be obtained by grinding or etching. A pressure responsive resistor formed in the diaphragm is automatically electrically isolated by the comparatively high resistivity of the polycrystalline silicon. Accordingly, PN junction isolation and passivating oxides on the diaphragm are not required thereby resulting in increased temperature stability.

REFERENCES:
patent: 3757414 (1973-09-01), Keller
patent: 3758830 (1973-09-01), Jackson

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