Polycrystalline silicon photovoltaic device

Details Polycrystalline silicon photovoltaic device Polycrystalline silicon photovoltaic device

1995-01-10

1996-02-20

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

148 332, 257 75, 437 4, H01L 3104, H01L 310392, H01L 310368

Patent

active

054921422

ABSTRACT:
A polycrystalline silicon film is prepared by forming an amorphous silicon film containing hydrogen and having an intensity ratio TA/TO of at least 0.5 of TA peak intensity to TO peak intensity in a Raman spectrum, and then heat treating the amorphous silicon film for converting the same to a polycrystalline silicon film. The polycrystalline silicon film has improved characteristics as a photoelectric conversion layer in a photovoltaic device.

REFERENCES:
patent: 4289822 (1981-09-01), Shimada et al.
patent: 4737379 (1988-04-01), Hudgens et al.
patent: 5017308 (1991-05-01), Iijima et al.
patent: 5122431 (1992-06-01), Kodama et al.
patent: 5133986 (1992-07-01), Blum et al.
patent: 5190838 (1993-03-01), Saitoh et al.
patent: 5192991 (1993-03-01), Hosokawa
patent: 5213670 (1993-05-01), Bertagnolli et al.
patent: 5221365 (1993-06-01), Noguchi et al.
patent: 5238879 (1993-08-01), Plaettner
patent: 5242505 (1993-09-01), Lin et al.
patent: 5288658 (1994-02-01), Ishihara
Silicon Processing for the VLSI Era; vol. 1--Process Technology; p. 179; by Wolf et al.

Affiliated with

Also associated with

Rating

Polycrystalline silicon photovoltaic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Polycrystalline silicon photovoltaic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline silicon photovoltaic device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1350929