Polycrystalline silicon photoelectric conversion device and proc

Details Polycrystalline silicon photoelectric conversion device and proc Polycrystalline silicon photoelectric conversion device and proc

1994-11-30

1996-11-19

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

257 51, 257 64, 437 4, 437109, 437119, 437 17, 437173, 437174, 437967, H01L 3106, H01L 310368, H01L 3118

Patent

active

055758622

ABSTRACT:
This invention provides an inexpensive polycrystalline silicon solar cell having a large grain size polycrystalline semiconductor layer grown on a low-cost metallurgical grade (MG) silicon substrate, and a process for its production. The polycrystalline silicon solar cell comprises a MG-silicon substrate, a metal oxide layer formed thereon and a polycrystalline silicon layer formed on the metal oxide layer. The process for producing the polycrystalline silicon solar cell comprises the steps of i) depositing the metal oxide layer on the MG-silicon substrate, ii) depositing a silicon layer on the surface of the metal oxide layer, iii) depositing a cap layer on the surface of the silicon layer and melting the silicon layer by heating from the upper part of the cap layer, followed by solidification to form a polycrystalline silicon layer, and iv) removing the cap layer and forming a semiconductor junction on the surface of the polycrystalline silicon layer.

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