Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Patent
1998-08-17
1999-09-28
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
257 64, 257 49, H01L 2904
Patent
active
059593148
ABSTRACT:
A method is provided of fabricating a thin film transistor semiconductor film of polycrystalline silicon on a transparent substrate suitable for the manufacture of a liquid crystal display. A film of substantially amorphous silicon is placed on the transparent substrate. Suspended in the amorphous silicon are small silicon seed crystals. As the amorphous silicon is annealed, crystal grains, begun from the seed crystals, are formed in the resulting polycrystalline silicon. The seed crystals help regulate the annealment process, and reduce process dependence on precision deposition and heating methods. The use of seed crystals also helps ensure that crystal grains are both large and consistent in size. Large grains promote to production of TFTs with high electron mobility and uniform performance across the entire LCD. An LCD with a TFT polycrystalline film layer over a transparent substrate, formed from annealing substantially amorphous silicon with suspended seed crystals, is also provided.
REFERENCES:
patent: 5614426 (1997-03-01), Funada et al.
patent: 5828084 (1998-10-01), Noguchi et al.
patent: 5879447 (1999-03-01), Okada et al.
Baumeister Bradley William
Jackson, Jr. Jerome
Maliszewski Gerald
Ripma David C.
Sharp Kabushiki Kaisha
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