Polycrystalline silicon film containing Ni

Details Polycrystalline silicon film containing Ni Polycrystalline silicon film containing Ni

2000-02-04

2008-03-04

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

C257S052000, C257S055000, C257S063000, C257SE33004

Reexamination Certificate

active

07339188

ABSTRACT:
The present invention is related to a polycrystalline silicon film containing Ni which is formed by crystallizing an amorphous silicon layer containing nickel. The present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017to 5×1019atoms/cm3on average and comprises a plurality of needle-shaped silicon crystallites. In another aspect, the present invention includes a polycrystalline silicon film wherein the polycrystalline film contains Ni atoms of which density ranges from 2×1017to 5×1019atoms/cm3, comprises a plurality of needle-shaped silicon crystallites and is formed on an insulating substrate. Such a polysilicon film according to the present invention avoids metal contamination usually generated in a conventional method of metal induced crystallization.

REFERENCES:
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patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5932893 (1999-08-01), Miyanaga et al.
patent: 5994164 (1999-11-01), Fonash et al.
patent: 6365933 (2002-04-01), Yamazaki et al.
patent: 02052419 (1990-02-01), None
patent: 02137326 (1990-05-01), None

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