Polycrystalline silicon emitter having an accurately...

Details Polycrystalline silicon emitter having an accurately... Polycrystalline silicon emitter having an accurately...

2005-11-15

2005-11-15

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S539000, C257S565000

Reexamination Certificate

active

06965132

ABSTRACT:
According to a disclosed embodiment, an etch stop layer is fabricated on top of a base. An amorphous layer is then formed on top of the etch stop layer. An opening is then etched in the amorphous layer and the etch stop layer. The opening is etched with an opening width substantially equal to a critical dimension. The opening with opening width substantially equal to a critical dimension is then filled with a polycrystalline emitter. The resulting polycrystalline emitter has an emitter width substantially equal to the critical dimension. Moreover, a polycrystalline emitter structure can be fabricated, in which the critical dimension, i.e. the emitter width, is precisely controlled. The result is a polycrystalline emitter structure which is substantially as small as the resolution that the photolithography process would allow.

REFERENCES:
patent: 4443932 (1984-04-01), Mastroianni et al.
patent: 5106767 (1992-04-01), Comfort et al.
patent: 5846869 (1998-12-01), Hashimoto et al.
patent: 5973372 (1999-10-01), Omid-Zohoor et al.
patent: 6020246 (2000-02-01), Koscielniak et al.
patent: 6251738 (2001-06-01), Huang
patent: 6355544 (2002-03-01), Essaian et al.
patent: 401216572 (1989-08-01), None
patent: 402196432 (1990-08-01), None
patent: 404094132 (1992-03-01), None
patent: 406029304 (1994-02-01), None
S. Wolf and R.N. Tauber, Silicon Processing for the VLSI, Lattice Press, vol. 1, 1986, p. 161.
Merriam-Webster Online Dictionary.

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