Polycrystalline silicon device electrode and method

Details Polycrystalline silicon device electrode and method Polycrystalline silicon device electrode and method

1989-02-03

1990-04-03

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 46, 437950, H01L 21265, H01L 21283

Patent

active

049140469

ABSTRACT:
A polycrystalline silicon electrode and method for its fabrication are disclosed. The electrode includes a barrier layer formed by the implantation of carbon, nitrogen, or oxygen ions between two layers of polycrystalline silicon. The lower layer of polycrystalline silicon is lightly doped or undoped and the top layer is heavily doped to increase the conductivity of the electrode. The barrier layer impedes the diffusion of conductivity determining dopant impurities from one layer of polycrystalline silicon to the other.

REFERENCES:
patent: 4143178 (1979-03-01), Harada et al.
patent: 4682407 (1987-07-01), Wilson et al.
patent: 4683637 (1987-08-01), Varker et al.
patent: 4740481 (1988-04-01), Wilson et al.
patent: 4774197 (1988-09-01), Haddad et al.
patent: 4808555 (1989-02-01), Mauntel et al.
Ghandhi, VLSI Fabrication Principles, John Wiley & Sons, N.Y., 1981, pp. 432-439.

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