Polycrystalline silicon as an electrode for a light emitting...

Details Polycrystalline silicon as an electrode for a light emitting... Polycrystalline silicon as an electrode for a light emitting...

2011-04-12

2011-04-12

Patel, Nimeshkumar D (Department: 2879)

Electric lamp and discharge devices

With luminescent solid or liquid material

With gaseous discharge medium

C257S241000, C257S249000, C257S483000, C313S483000, C427S066000

Reexamination Certificate

active

07923911

ABSTRACT:
Metal induced polycrystallized silicon is used as the anode in a light emitting device, such as an OLED or AMOLED. The polycrystallized silicon is sufficiently non-absorptive, transparent and made sufficiently conductive for this purpose. A thin film transistor can be formed onto the polycrystallized silicon anode, with the silicon anode acting as the drain of the thin film transistor, thereby simplifying production.

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