Stock material or miscellaneous articles – Coated or structually defined flake – particle – cell – strand,... – Particulate matter
Reexamination Certificate
2005-03-01
2005-03-01
Le, H. Thi (Department: 1773)
Stock material or miscellaneous articles
Coated or structually defined flake, particle, cell, strand,...
Particulate matter
C117S204000, C117S205000, C117S902000, C117S935000, C423S348000
Reexamination Certificate
active
06861144
ABSTRACT:
Foamed polycrystalline silicon having bubbles therein and an apparent density of 2.20 g/cm3or less. This silicon generates an extremely small amount of fine grains by crushing and can be easily crushed. There is also provided a method of producing foamed polycrystalline silicon. There is further provided a polycrystalline silicon production apparatus in which the deposition and melting of silicon are carried out on the inner surface of a cylindrical vessel, a chlorosilane feed pipe is inserted into the cylindrical vessel to a silicon molten liquid, and seal gas is supplied into a space between the cylindrical vessel and the chlorosilane feed pipe.
REFERENCES:
patent: 4176166 (1979-11-01), Carman
patent: 4460412 (1984-07-01), Imura et al.
patent: 4547258 (1985-10-01), Witter et al.
patent: 4710260 (1987-12-01), Witter et al.
patent: 4737348 (1988-04-01), Levin
patent: 4994107 (1991-02-01), Flagan et al.
patent: 5164138 (1992-11-01), Dietl et al.
patent: 5382412 (1995-01-01), Kim et al.
patent: 5469200 (1995-11-01), Terai
patent: 6350312 (2002-02-01), Phillips et al.
patent: 51-37819 (1976-03-01), None
patent: 52-133085 (1977-11-01), None
patent: 54-124896 (1979-09-01), None
patent: 56-63813 (1981-05-01), None
patent: 59-501109 (1984-06-01), None
patent: 59-121109 (1984-07-01), None
patent: 59-162117 (1984-09-01), None
patent: 62-7619 (1987-01-01), None
patent: 10-33969 (1998-02-01), None
patent: 10-273310 (1998-10-01), None
patent: 11-314996 (1999-11-01), None
Giovanni Sotgiu et al.; Thin Solid Films, vol. 297, No. 1-2, Apr. 1, 1997, pp. 18-21.
G.F. Cerofolini et al.; Materials Science and Engineering, vol. 27, No. 1-2, Apr. 2000. pp. 1-52.
Oda Hiroyuki
Wakamatsu Satoru
Le H. Thi
Tokuyama Corporation
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