Polycrystalline silicon and crystallization method thereof

Details Polycrystalline silicon and crystallization method thereof Polycrystalline silicon and crystallization method thereof

2006-11-08

2011-11-08

Kunemund, Bob M (Department: 1714)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

C117S008000, C117S009000, C117S068000, C117S070000

Reexamination Certificate

active

08052789

ABSTRACT:
Disclosed are a polycrystalline silicon and a crystallization method thereof according to an exemplary embodiment of the present invention. The polycrystalline silicon comprises: an insulating substrate; and an optical portion formed on the insulating substrate for receiving a CW laser beam and varying the intensity of the beam in order of strength-weakness, strength-weakness, and strength-weakness on one dimension, so that an amorphous silicon thin film is crystallized. Therefore, the present invention can form a good polycrystalline silicon thin film by growing crystal grains with a constant direction and size, when an amorphous silicon thin film disposed on an insulating film such as a glass substrate is crystallized to a polycrystalline silicon thin film.

REFERENCES:
patent: 7105052 (2006-09-01), Schlenoff
patent: 2007/0158611 (2007-07-01), Oldenburg
patent: 2002-319606 (2002-10-01), None
Girginoudi et el., Journal of Applied Physics, Aug. 15, 1998, vol. 84, No. 4 pp. 1968-1972.
Jang et al., Vacuum vol. 51, No. 4, pp. 769-775, 1998.
lm et el., Appl. Phys. Lett., vol. 64, No. 17, Apr. 25, 1994, pp. 2303-2305.
Pfeiffer et al., “Appl. Phys. Lett.” vol. 51, No. 16, Oct. 19, 1987, pp. 1256-1258.

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