Polycrystalline silicon active layer for good carrier mobility

Details Polycrystalline silicon active layer for good carrier mobility Polycrystalline silicon active layer for good carrier mobility

1990-07-09

1991-02-12

James, Andrew J.

Fishing, trapping, and vermin destroying

357 4, 357 237, 357 60, 437973, H01L 2904, H01L 2978, H01L 2712, H01L 4500

Patent

active

049928465

ABSTRACT:
In a method of producing a semiconductor device, an amorphous silicon layer is deposited on a polycrystalline silicon layer formed on an insulator layer (SiO.sub.2). Ions are implanted into the amorphous silicon layer while heat treating the amorphous silicon layer at a low temperature thereby forming a solid-phase growth layer, and a transistor is formed of the solid-phase growth layer.

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