Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1997-03-28
1998-09-15
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 56, 257 62, 257 59, 257 72, 257 75, 438149, 438162, 438166, H01L 21336
Patent
active
058083189
ABSTRACT:
A polycrystalline semiconductor thin film formed in a stripe shape on an insulating substrate wherein crystal particles are arranged in a line-texture form in a longitudinal direction of a stripe; an electric field effect mobility .nu..sub.L in a longitudinal direction of a stripe is different from an electric field effect mobility .nu..sub.S in a width direction of the stripe, and .nu..sub.L .gtoreq.1.5.multidot..nu..sub.S is satisfied.
REFERENCES:
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5534445 (1996-07-01), Tran et al.
patent: 5589406 (1996-12-01), Kato et al.
Kunio Masumo, et al. "Low-Temperature Preparation of Poly-Si TFT by Ar Laser Annealing at High Scanning Speed", Electronic Data and Communication Association C-2, vol. J76-C-2, No. 5, (pp. 256-259), May, 1993.
Electronic Data and Communication Association, vol. J76-C-2, No. 5, pp. 256-259, 1993, K. Masumo, et al., "Low Temperature Preparation of Poly-Si TFT By AR Laser Annealing With High Scanning Speed" (With English Translation, pp. 112-116).
IEEE Transactions on Electron Devices, vol. ED-27, No. 1, Jan. 1980, pp. 290-293, T. I. Kamins, et al., "A Monolithic Integrated Circuit Fabricated in Laser-Annealed Polysilicon".
J. Electrochem. Soc.: Solid-State Science and Technology, vol. 128, No. 9, pp. 1981-1986, Sep. 1981, H.W. Lam, et al., "Single Crystal Silicon-On-Oxide By A Scanning CW Laser Induced Lateral Seeding Process".
Electronics Letters, vol. 15, No. 14, pp. 435-437, Jul. 5, 1979, A.F. Tasch, et al., "Silicon-On-Insulator M.O.S.F.E.T.S Fabricated On Laser-Annealed Polysilicon On SiO.sub.2 ".
Appl. Phys. Lett. vol. 35, No. 2, pp. 173-175, Jul. 15, 1979, K.F. Lee, et al., "Thin Film Mosfet's Fabricated In Laser-Annealed Polycrystalline Silicon".
Kunigita Masaya
Masumo Kunio
Abraham Fetsum
AG Technology Co., Ltd.
Thomas Tom
LandOfFree
Polycrystalline semiconductor thin film for semiconductor TFT on does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Polycrystalline semiconductor thin film for semiconductor TFT on, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Polycrystalline semiconductor thin film for semiconductor TFT on will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-91121