Polycrystalline semiconductor resistor having a noise reducing f

Details Polycrystalline semiconductor resistor having a noise reducing f Polycrystalline semiconductor resistor having a noise reducing f

1981-11-27

1984-06-19

James, Andrew J.

357 59, 357 53, H01L 2702, H01L 2940, H01L 2904

Patent

active

044555679

ABSTRACT:
A polycrystalline silicon field plate underlies a polycrystalline silicon resistor and is heavily doped so that it is virtually a conductor while an aluminum field plate overlies the polycrystalline silicon resistor. Electrical potentials are applied to the polycrystalline field plate and the aluminum field plate, the potentials being selected so that an electric field is created at the boundary between the polycrystalline semiconductor resistor and the surrounding dielectric layer, the electric field forcing charge carriers in the resistor away from the boundary and toward a central region of the resistor. As a result, surface state noise in the resistor is significantly reduced.

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Lai-Wang Chen, "Electrical and Noise Properties of Vacuum Deposited Thin Germanium Films" PhD Thesis, University of South Florida, Dec. 1976, 197 pp.

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