Polycrystalline semiconductive film, semiconductor device using

Details Polycrystalline semiconductive film, semiconductor device using Polycrystalline semiconductive film, semiconductor device using

1994-09-27

1996-03-12

Jackson, Jr., Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257466, 257 75, 257 64, 136258, 437173, 437233, 437 4, H01L 2906, H01L 21469

Patent

active

054989043

ABSTRACT:
A semiconductive film is formed on a substrate having a surface with indentations defining a plurality of plane regions and elevated step difference portions between adjacent plane regions. The semiconductive film is irradiated with energy beams to be polycrystallized, whereby the positions of the crystal grain boundaries in the polycrystalline semiconductive film are controlled.

REFERENCES:
patent: 4781766 (1988-11-01), Barnett et al.
patent: 5155051 (1992-10-01), Noguchi et al.
patent: 5264070 (1993-11-01), Urquhart et al.

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